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QPA2611, RF Amplifier 8-12 GHz 5W PA

RF & Wireless\RF Integrated Circuits\RF AmplifierQPA261x X-Band Power Amplifiers Qorvo QPA261x X-Band Power Amplifiers are high-performance amplifiers fabricated with 0.15µm GaN on SiC process (QGaN15). These power amplifiers support tight lattice spacing requirements for phased array radar applications. The QPA261x amplifiers feature RF input and output ports that are matched to 50Ω and include integrated DC blocking capacitors. These power amplifiers are stored at -55°C to 150°C temperature range. The QPA261x amplifiers operate at -4V to 0V maximum gate voltage range. These power amplifiers are ideal for use in radar, communication, and Satcom.

Brand	Qorvo
Development Kit	QPA2611EVB
Factory Pack Quantity: Factory Pack Quantity	50
Gain	35.5 dB
Input Return Loss	12 dB
Manufacturer	Qorvo
Maximum Operating Temperature	+85 C
Minimum Operating Temperature	-40 C
Moisture Sensitive	Yes
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Operating Frequency	8 GHz to 12 GHz
Operating Supply Current	105 mA
Operating Supply Voltage	24 V
Package / Case	QFN-24
Pd - Power Dissipation	11 W
Product Category	RF Amplifier
Product Type	RF Amplifier
Series	QPA2611
Subcategory	Wireless & RF Integrated Circuits
Technology	GaN SiC
Type	Power Amplifiers