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QPM1017, RF Amplifier 5.7 - 7.0 GHz 100 W GaN PA Module
RF & Wireless\RF Integrated Circuits\RF AmplifierQPM1017 5.7GHz to 7.0GHz 100W GaN Power Amplifier Qorvo QPM1017 5.7GHz to 7.0GHz 100W GaN Power Amplifier is a packaged, high-power C-band amplifier module, fabricated using the QGaN15 0.15μm Gallium Nitride (GaN) on Silicon Carbide (SiC) process. Covering 5.7GHz to 7.0GHz, the Qorvo QPM1017 provides 100W of saturated output power with 18dB of large signal gain while achieving >35% power-added efficiency. QPM1017 provides 40W linear power for satellite communications applications with 25dBc 3rd Order Intermodulation distortion products (IM3). The Qorvo QPM1017 is packaged in a 10-lead 19.05mm x 19.05mm bolt-down package with a copper (Cu) base for superior thermal management.
Brand | Qorvo |
Factory Pack Quantity | 10 |
Gain | 24 dB |
Manufacturer | Qorvo |
Maximum Operating Temperature | +85 C |
Minimum Operating Temperature | -40 C |
Mounting Style | Screw |
Operating Frequency | 5.7 GHz to 7 GHz |
Operating Supply Current | 3.4 A |
Operating Supply Voltage | 24 V |
Product Category | RF Amplifier |
Product Type | RF Amplifier |
Subcategory | Wireless & RF Integrated Circuits |
Technology | GaN SiC |
Type | Power Amplifiers |