Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт

Цена по запросу
RGCL80TS60DGC13 Single Collector, Single Emitter, Single Gate IGBT, 65 A 600 V TO-247GE
Semiconductors\Discrete Semiconductors\IGBTsROHM Field Stop Trench IGBT has a low VCEsat. It contributes to energy saving high efficiency and a wide range of high voltage and high current applications.
Configuration | Single Collector, Single Emitter, Single Gate |
Maximum Collector Emitter Voltage | 600 V |
Maximum Continuous Collector Current | 65 A |
Maximum Gate Emitter Voltage | ±30V |
Maximum Power Dissipation | 148 W |
Number of Transistors | 1 |
Package Type | TO-247GE |