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RJU003N03FRAT106, 2.5V Drive N-Ch AEC-Q101
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RJU003N03FRAT106, 2.5V Drive N-Ch AEC-Q101

Semiconductors\Discrete SemiconductorsAEC-Q101 Automotive MOSFETs ROHM Semiconductor AEC-Q101 Automotive MOSFETs provide wide drive type and support from a small signal to high power. These ROHM Semiconductor MOSFETs are available in a wide range of microminiature packages and help reduce the board space. The AEC-Q101 MOSFETs are automotive-supported products and are based on standard AEC-Q101. These MOSFETs offer high-speed switching and low on-resistance. The AEC-Q101 MOSFETs are available in single and dual polarities and provide a drain-source voltage ranging from -100V DSS to 100V DSS. These MOSFETs offer a drain-current ranging from -25A to 40A and R DS(on) ranging from 0.004Ω to 3Ω (typical). The AEC-Q101 MOSFETs provide a total gate charge of 2nC to 80nC.
Brand ROHM Semiconductor
Channel Mode Enhancement
Configuration Single
Factory Pack Quantity: Factory Pack Quantity 3000
Fall Time 32 ns
Forward Transconductance - Min 400 mS
Id - Continuous Drain Current 300 mA
Manufacturer ROHM Semiconductor
Maximum Operating Temperature +150 C
Minimum Operating Temperature -55 C
Mounting Style SMD/SMT
Number of Channels 1 Channel
Package / Case SOT-323-3
Part # Aliases RJU003N03FRA
Pd - Power Dissipation 200 mW
Product Category MOSFET
Product Type MOSFET
Qualification AEC-Q101
Rds On - Drain-Source Resistance 1.1 Ohms
Rise Time 4 ns
Subcategory MOSFETs
Technology Si
Transistor Polarity N-Channel
Typical Turn-Off Delay Time 9 ns
Typical Turn-On Delay Time 6 ns
Vds - Drain-Source Breakdown Voltage 30 V
Vgs - Gate-Source Voltage -12 V, +12 V
Vgs th - Gate-Source Threshold Voltage 800 mV

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