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RJU003N03FRAT106, 2.5V Drive N-Ch AEC-Q101
Semiconductors\Discrete SemiconductorsAEC-Q101 Automotive MOSFETs
ROHM Semiconductor AEC-Q101 Automotive MOSFETs provide wide drive type and support from a small signal to high power. These ROHM Semiconductor MOSFETs are available in a wide range of microminiature packages and help reduce the board space. The AEC-Q101 MOSFETs are automotive-supported products and are based on standard AEC-Q101. These MOSFETs offer high-speed switching and low on-resistance. The AEC-Q101 MOSFETs are available in single and dual polarities and provide a drain-source voltage ranging from -100V DSS to 100V DSS. These MOSFETs offer a drain-current ranging from -25A to 40A and R DS(on) ranging from 0.004Ω to 3Ω (typical). The AEC-Q101 MOSFETs provide a total gate charge of 2nC to 80nC.
Brand | ROHM Semiconductor |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity: Factory Pack Quantity | 3000 |
Fall Time | 32 ns |
Forward Transconductance - Min | 400 mS |
Id - Continuous Drain Current | 300 mA |
Manufacturer | ROHM Semiconductor |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | SOT-323-3 |
Part # Aliases | RJU003N03FRA |
Pd - Power Dissipation | 200 mW |
Product Category | MOSFET |
Product Type | MOSFET |
Qualification | AEC-Q101 |
Rds On - Drain-Source Resistance | 1.1 Ohms |
Rise Time | 4 ns |
Subcategory | MOSFETs |
Technology | Si |
Transistor Polarity | N-Channel |
Typical Turn-Off Delay Time | 9 ns |
Typical Turn-On Delay Time | 6 ns |
Vds - Drain-Source Breakdown Voltage | 30 V |
Vgs - Gate-Source Voltage | -12 V, +12 V |
Vgs th - Gate-Source Threshold Voltage | 800 mV |