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RK7002BMT116, 2.5V Drive Nch MOSFET

Semiconductors\Discrete Semiconductors Описание Транзистор: N-MOSFET; полевой; 60В; 250мА; Idm: 1А; 200/350мВт Характеристики Категория Транзистор Тип полевой Вид MOSFET

Категория	Транзистор
Тип	полевой
Вид	MOSFET
Continuous Drain Current (Id) @ 25В°C	250mA
Power Dissipation-Max (Ta=25В°C)	200mW
Rds On - Drain-Source Resistance	2.4О© @ 250mA,10V
Transistor Polarity	N Channel
Vds - Drain-Source Breakdown Voltage	60V
Vgs - Gate-Source Voltage	2.3V @ 1mA
Continuous Drain Current (Id)	300mA
Drain Source On Resistance (RDS(on)@Vgs,Id)	2Ω@10V, 0.3A
Drain Source Voltage (Vdss)	60V
Gate Threshold Voltage (Vgs(th)@Id)	1.9V
Power Dissipation (Pd)	350mW
Type	null
Case	SOT23
Drain current	0.25A
Drain-source voltage	60V
Features of semiconductor devices	ESD protected gate
Gate-source voltage	±20V
Kind of channel	enhanced
Kind of package	reel, tape
Manufacturer	ROHM SEMICONDUCTOR
Mounting	SMD
On-state resistance	2.4Ω
Polarisation	unipolar
Power dissipation	200/350mW
Pulsed drain current	1A
Type of transistor	N-MOSFET
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	250 mA
Maximum Drain Source Voltage	60 V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-23
Pin Count	3
Transistor Material	Si