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RQ3E120ATTB

Semiconductors\Discrete SemiconductorsSilicon Power MOSFETs ROHM Semiconductor Silicon Power MOSFETs feature ultra-fast switching speeds and low on-resistance. These MOSFETs are available in a wide lineup of packages, including the miniature 0604 size to save space in various designs.

Continuous Drain Current (Id) @ 25В°C	39A
Power Dissipation-Max (Ta=25В°C)	20W
Rds On - Drain-Source Resistance	11.3mО© @ 12A,4.5V
Transistor Polarity	P Channel
Vds - Drain-Source Breakdown Voltage	30V
Vgs - Gate-Source Voltage	2.5V @ 1mA
Brand	ROHM Semiconductor
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	3000
Fall Time	95 ns
Id - Continuous Drain Current	12 A
Manufacturer	ROHM Semiconductor
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	HSMT-8
Part # Aliases	RQ3E120AT
Pd - Power Dissipation	2 W
Product Category	MOSFETs
Product Type	MOSFETs
Qg - Gate Charge	62 nC
Rds On - Drain-Source Resistance	61 mOhms
Rise Time	30 ns
Subcategory	Transistors
Technology	Si
Transistor Polarity	P-Channel
Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	140 ns
Typical Turn-On Delay Time	20 ns
Vds - Drain-Source Breakdown Voltage	39 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	2.5 V