Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
RS1E220ATTB1
Semiconductors\Discrete SemiconductorsSilicon Power MOSFETs
ROHM Semiconductor Silicon Power MOSFETs feature ultra-fast switching speeds and low on-resistance. These MOSFETs are available in a wide lineup of packages, including the miniature 0604 size to save space in various designs.
| Brand | ROHM Semiconductor |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 2500 |
| Fall Time | 140 ns |
| Id - Continuous Drain Current | 76 A |
| Manufacturer | ROHM Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package/Case | HSOP-8 |
| Pd - Power Dissipation | 34 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 130 nC |
| Rds On - Drain-Source Resistance | 4.1 mOhms |
| Rise Time | 40 ns |
| Subcategory | MOSFETs |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 260 ns |
| Typical Turn-On Delay Time | 25 ns |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
Похожие товары
Цена по запросу
Цена по запросу
Цена по запросу
Цена по запросу
