Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт

Цена по запросу
RTF016N05FRATL, AECQ
Semiconductors\Discrete SemiconductorsRTF016N05FRA Small Signal MOSFET ROHM Semiconductor RTF016N05FRA Small Signal MOSFET features low on-resistance, built-in G-S protection diode, and Pb-free lead plating. This MOSFET is available in TUMT3 small surface-mount package and is AEC-Q101 qualified. The RTF016N05FRA MOSFET offers 45V drain-source voltage, ±1.6A continuous drain current, and ±6.4A pulsed drain current. This MOSFET operates at -55°C to 150°C junction temperature range and storage temperature range. The RTF016N05FRA signal MOSFET is ideal for use in switching.
Brand | ROHM Semiconductor |
Channel Mode | Enhancement |
Factory Pack Quantity | 3000 |
Id - Continuous Drain Current | 1.6 A |
Manufacturer | ROHM Semiconductor |
Maximum Operating Temperature | +150 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Packaging | Reel, Cut Tape |
Part # Aliases | RTF016N05FRA |
Pd - Power Dissipation | 800 mW |
Product Category | MOSFETs |
Product Type | MOSFETs |
Qg - Gate Charge | 2.3 nC |
Qualification | AEC-Q101 |
Rds On - Drain-Source Resistance | 190 mOhms |
Subcategory | Transistors |
Technology | Si |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 45 V |
Vgs - Gate-Source Voltage | -12 V, +12 V |
Vgs th - Gate-Source Threshold Voltage | 1.5 V |