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Цена по запросу
SBR20A60CTB, 650mV@10A 60V 10A Dual Common Cathode TO-263AB(D2PAK) Super BarrIer RectIfIer (SBR)
Diodes\Super Barrier Rectifiers (SBR)SBR® Super Barrier Rectifiers Diodes Inc SBR® Super Barrier Rectifiers use a MOS manufacturing process to create a superior two-terminal device with a lower forward voltage than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes. SBR Diodes are designed for high power, low loss and fast switching applications. The presence of a MOS channel within its structure forms a low potential barrier for the majority carriers. That means SBR forward bias operation at low voltage is similar to a Schottky diode. The leakage current is lower than Schottky Diode in reverse bias due to the overlap of the P-N depletion layers and the absence of potential barrier reduction due to the image charge.
| Diode Configuration | 1 pair of common cathodes |
| Forward Voltage (Vf) @ If | 650mV@10A |
| Rectified Current | 10A |
| Reverse Leakage Current | 500uA@60V |
| Reverse Voltage (Vr) | 60V |
| Brand | Diodes Incorporated |
| Configuration | Single Dual Anode |
| Factory Pack Quantity | 50 |
| If - Forward Current | 20 A |
| Ifsm - Forward Surge Current | 180 A |
| Ir - Reverse Current | 100 mA |
| Manufacturer | Diodes Incorporated |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| Mounting Style | SMD/SMT |
| Package/Case | D2PAK-3(TO-263-3) |
| Packaging | Tube |
| Product Category | Schottky Diodes & Rectifiers |
| Product Type | Schottky Diodes & Rectifiers |
| Product | Schottky Rectifiers |
| Subcategory | Diodes & Rectifiers |
| Technology | Si |
| Vf - Forward Voltage | 470 mV |
| Vrrm - Repetitive Reverse Voltage | 60 V |
| Вес, г | 2.08 |
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