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мелкий и крупный опт
мелкий и крупный опт

Цена по запросу
SCS206AJTLL, Диод выпрямительный Шоттки, SiC, SMD, 650В, 6А, TO263AB, 48Вт
Silicon Carbide (SiC) Devices\SiC DiodesSiC Schottky Barrier Diodes ROHM Semiconductor® SiC (Silicon Carbide) Schottky Barrier Diodes feature low total capacitive (Qc) that reduces switching loss, enabling high-speed switching operation. In addition, unlike silicon-based fast recovery diodes where the trr increases along with temperature, SiC devices maintain constant characteristics, resulting in better performance. This makes them ideal Ideal for use as key devices in a variety of applications, including inverters and chargers for EV and solar power conditioners.
Forward Voltage (Vf@If) | 1.55V@6A |
Rectified Current (Io) | 6A |
Reverse Voltage (Vr) | 650V |
Brand | ROHM Semiconductor |
Configuration | Single |
Factory Pack Quantity | 1000 |
If - Forward Current | 6 A |
Ifsm - Forward Surge Current | 23 A |
Ir - Reverse Current | 1.2 uA |
Manufacturer | ROHM Semiconductor |
Maximum Operating Temperature | +175 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Package/Case | TO-263AB-4 |
Part # Aliases | SCS206AJ |
Pd - Power Dissipation | 48 W |
Product Category | Schottky Diodes & Rectifiers |
Product Type | Schottky Diodes & Rectifiers |
Product | Schottky Silicon Carbide Diodes |
Subcategory | Diodes & Rectifiers |
Technology | SiC |
Vf - Forward Voltage | 1.35 V |
Vr - Reverse Voltage | 650 V |
Vrrm - Repetitive Reverse Voltage | 650 V |
Diode Configuration | Single |
Diode Technology | Schottky Barrier |
Diode Type | Schottky |
Maximum Continuous Forward Current | 6A |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | TO-263 |
Peak Non-Repetitive Forward Surge Current | 90A |
Peak Reverse Repetitive Voltage | 650V |
Pin Count | 3 |
Rectifier Type | Schottky Rectifier |
Вес, г | 1.5 |