Как мы работаем

По сертификату
"военный регистр"

Только с Юр. Лицами,
мелкий и крупный опт

Цена по запросу

SCT3080ALGC11, N-Ch 650V 30A Silicon Carbide SiC

Semiconductors\Discrete Semiconductors Описание Карбидокремниевый силовой МОП-транзистор, N-канальный, 30А, 650В, 0.08Ом, 18В, 5.6В Характеристики Категория Транзистор Тип биполярный Вид NPN

Категория	Транзистор
Тип	биполярный
Вид	NPN
Brand	ROHM Semiconductor
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	30
Fall Time	16 ns
Forward Transconductance - Min	3.8 S
Id - Continuous Drain Current	30 A
Manufacturer	ROHM Semiconductor
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	TO-247-3
Packaging	Tube
Part # Aliases	SCT3080AL
Pd - Power Dissipation	134 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	48 nC
Rds On - Drain-Source Resistance	80 mOhms
Rise Time	26 ns
Series	SCT3x
Subcategory	MOSFETs
Technology	SiC
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	27 ns
Typical Turn-On Delay Time	16 ns
Vds - Drain-Source Breakdown Voltage	650 V
Vgs - Gate-Source Voltage	-4 V, +22 V
Vgs th - Gate-Source Threshold Voltage	2.7 V
Channel Type	N
Lead Finish	Matte Tin
Maximum Continuous Drain Current	30 A
Maximum Drain Source Voltage	650 V
Maximum Gate Source Voltage	-4 to 22 V
Maximum Processing Temperature	265
Mounting	Through Hole
Operating Temperature	-55 to 175 °C
Package Dimensions	16x5x21
RDS-on	104@18V MOhm
Typical Fall Time	16 ns
Typical Rise Time	26 ns