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SFH 309 FA-3/4, Фототранзистор, p макс 900нм, 35В, 12°, d 730-1120нм, 0,038мм2

Optoelectronics\Photoelements\PhototransistorsThis family of NPN silicon phototransistors, from OSRAM Opto Semiconductors, are a range of 3mm (T-1) through-hole devices.

Active area	0.038mm2
Collector-emitter voltage	35V
Dark current	1nA
LED diameter	3mm
LED lens	black with IR filter
Manufacturer	ams OSRAM
Mounting	THT
Power	165mW
Type of photoelement	phototransistor
Viewing angle	12°
Wavelength	730…1120nm
Wavelength of peak sensitivity	900nm
Angle of Half Sensitivity	24 °
Collector Current	15mA
Maximum Dark Current	200nA
Maximum Light Current	4500µA
Maximum Wavelength Detected	1120nm
Minimum Wavelength Detected	730nm
Mounting Type	Through Hole
Number of Channels	1
Number of Pins	2
Package Type	3mm(T-1)
Polarity	NPN
Spectral Range of Sensitivity	730 → 1120 nm
Spectrums Detected	Infrared
Typical Fall Time	7µs
Typical Rise Time	7µs
Width	4mm
Brand	OSRAM Opto Semiconductors
Collector- Emitter Voltage VCEO Max	35 V
Collector-Emitter Breakdown Voltage	35 V
Collector-Emitter Saturation Voltage	200 mV
Factory Pack Quantity	2000
Fall Time	7 us
Half Intensity Angle Degrees	12 deg
Height	5.2 mm
Length	4 mm
Lens Color/Style	Black
Light Current	2 mA
Maximum On-State Collector Current	15 mA
Maximum Operating Temperature	+100 C
Minimum Operating Temperature	-40 C
Mounting Style	Through Hole
Operating Supply Voltage	-
Output Current	-
Package / Case	T-1
Part # Aliases	Q62702P3590
Pd - Power Dissipation	165 mW
Peak Wavelength	900 nm
Product	Phototransistors
Product Category	Phototransistors
Propagation Delay - Max	-
Rise Time	7 us
RoHS	Details
Type	Silicon NPN Phototransistor
Вес, г	0.17