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SFH 314 FA, Фототранзистор, 870 нм, 80 °, 200 мВт, 2 вывод(-ов), Radial Leaded
Оптоэлектроника и Дисплеи\ФототранзисторыThis family of NPN silicon phototransistors, from OSRAM Opto Semiconductors, are a range of 5mm (T-1 3/4) through-hole devices.
Количество Выводов | 2вывод(-ов) |
Стиль Корпуса Транзистора | Radial Leaded |
Типичное Значение Длины Волны | 870нм |
Угол Обзора | 80° |
Энергопотребление | 200мВт |
Angle of Half Sensitivity | 80 ° |
Collector Current | 50mA |
Maximum Dark Current | 200nA |
Maximum Wavelength Detected | 1080nm |
Minimum Wavelength Detected | 740nm |
Mounting Type | Through Hole |
Number of Channels | 1 |
Number of Pins | 2 |
Package Type | 5mm(T-1 3/4) |
Polarity | NPN |
Spectral Range of Sensitivity | 740 → 1080 nm |
Spectrums Detected | Infrared |
Typical Fall Time | 14µs |
Typical Rise Time | 14µs |
Width | 5.9mm |
Brand | ams OSRAM |
Collector- Emitter Voltage VCEO Max | 70 V |
Collector-Emitter Breakdown Voltage | 70 V |
Collector-Emitter Saturation Voltage | 150 mV |
Dark Current | 200 nA |
Factory Pack Quantity: Factory Pack Quantity | 1000 |
Half Intensity Angle Degrees | 40 deg |
Lens Color/Style | Black |
Light Current | 2.5 mA |
Manufacturer | ams OSRAM |
Maximum On-State Collector Current | 50 mA |
Maximum Operating Temperature | +100 C |
Minimum Operating Temperature | -40 C |
Mounting Style | Through Hole |
Package / Case | T-1 3/4 |
Packaging | Bulk |
Part # Aliases | Q62702P1675 Q62702P1675 |
Pd - Power Dissipation | 200 mW |
Peak Wavelength | 870 nm |
Product Category | Phototransistors |
Product Type | Phototransistors |
Product | Phototransistors |
Qualification | AEC-Q101 |
Subcategory | Optical Detectors and Sensors |
Type | Silicon NPN Phototransistor |
Wavelength | 870 nm |
Вес, г | 0.35 |