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По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
SFH309FA
Фототранзисторы Описание Фототранзистор, 3мм, -p макс: 900нм, 35В, 12°, -d: 730-1120нм
| кол-во в упаковке | 2000 |
| Brand | OSRAM Opto Semiconductors |
| Collector- Emitter Voltage VCEO Max | 35 V |
| Collector-Emitter Breakdown Voltage | 35 V |
| Collector-Emitter Saturation Voltage | 200 mV |
| Dark Current | 15 mA |
| Factory Pack Quantity | 2000 |
| Fall Time | - |
| Half Intensity Angle Degrees | 12 deg |
| Height | 5.2 mm |
| Length | 4 mm |
| Lens Color/Style | Black |
| Light Current | 5 mA |
| Manufacturer | Osram Opto Semiconductor |
| Maximum On-State Collector Current | 15 mA |
| Maximum Operating Temperature | +100 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Through Hole |
| Operating Supply Voltage | - |
| Output Current | - |
| Package / Case | T-1 |
| Part # Aliases | Q62702P0941 |
| Pd - Power Dissipation | 165 mW |
| Peak Wavelength | 900 nm |
| Product | Phototransistors |
| Product Category | Phototransistors |
| Propagation Delay - Max | - |
| Rise Time | - |
| RoHS | Details |
| Type | Silicon NPN Phototransistor |
| Wavelength | 900 nm |
| Width | 4 mm |
| Angle of Half Sensitivity | 24 ° |
| Collector Current | 15mA |
| Maximum Dark Current | 200nA |
| Maximum Wavelength Detected | 1120nm |
| Minimum Wavelength Detected | 730nm |
| Mounting Type | Through Hole |
| Number of Channels | 1 |
| Number of Pins | 2 |
| Package Type | 3mm(T-1) |
| Polarity | NPN |
| Spectral Range of Sensitivity | 730 → 1120 nm |
| Spectrums Detected | Infrared |
| Typical Fall Time | 7µs |
| Typical Rise Time | 7µs |
| Вес, г | 0.3 |
