Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт

Цена по запросу
SFH309FA
Электроэлемент Описание Фототранзистор, 3мм, -p макс: 900нм, 35В, 12°, -d: 730-1120нм
Brand | OSRAM Opto Semiconductors |
Collector- Emitter Voltage VCEO Max | 35 V |
Collector-Emitter Breakdown Voltage | 35 V |
Collector-Emitter Saturation Voltage | 200 mV |
Dark Current | 15 mA |
Factory Pack Quantity | 2000 |
Fall Time | - |
Half Intensity Angle Degrees | 12 deg |
Height | 5.2 mm |
Length | 4 mm |
Lens Color/Style | Black |
Light Current | 5 mA |
Manufacturer | Osram Opto Semiconductor |
Maximum On-State Collector Current | 15 mA |
Maximum Operating Temperature | +100 C |
Minimum Operating Temperature | -40 C |
Mounting Style | Through Hole |
Operating Supply Voltage | - |
Output Current | - |
Package / Case | T-1 |
Part # Aliases | Q62702P0941 |
Pd - Power Dissipation | 165 mW |
Peak Wavelength | 900 nm |
Product | Phototransistors |
Product Category | Phototransistors |
Propagation Delay - Max | - |
Rise Time | - |
RoHS | Details |
Type | Silicon NPN Phototransistor |
Wavelength | 900 nm |
Width | 4 mm |
кол-во в упаковке | 2000 |
Angle of Half Sensitivity | 24 ° |
Collector Current | 15mA |
Maximum Dark Current | 200nA |
Maximum Wavelength Detected | 1120nm |
Minimum Wavelength Detected | 730nm |
Mounting Type | Through Hole |
Number of Channels | 1 |
Number of Pins | 2 |
Package Type | 3mm(T-1) |
Polarity | NPN |
Spectral Range of Sensitivity | 730 → 1120 nm |
Spectrums Detected | Infrared |
Typical Fall Time | 7µs |
Typical Rise Time | 7µs |
Вес, г | 0.3 |