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Цена по запросу
SG01S-18, Photodiode, 0.2 fA, 300 nm, TO-18-2
Optoelectronics & Displays\Photo Diodes\Unamplified Photo Diodes
The SG01S-18 is a Broadband SiC based UV Photodiode provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. This features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C. The temperature coefficient of signal (responsivity) is also low, 0.1%/K. It is available with seven different active chip areas from 0.06 to 36mm². Four filtered versions lead to a tighter sensitivity range.
• 10mW/cm² Peak radiation results a current of approximately 780nA
| Dark Current | 0.2fA |
| Diode Case Style | TO-18 |
| No. of Pins | 2Pins |
| Operating Temperature Max | 170°C |
| Operating Temperature Min | -55°C |
| Wavelength of Peak Sensitivity | 300nm |
| Вес, г | 0.454 |
