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SH8M31GZETB, MOSFET SH8M31 is a Power MOSFET with Low on-resistance, suitable for switching.

Electronic Vehicle (EV) Solutions ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.

Brand	ROHM Semiconductor
Channel Mode	Enhancement
Configuration	Dual
Factory Pack Quantity	2500
Fall Time	13 ns, 40 ns
Id - Continuous Drain Current	4.5 A
Manufacturer	ROHM Semiconductor
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	2 Channel
Package/Case	SOP-8
Packaging	Reel, Cut Tape
Part # Aliases	SH8M31
Pd - Power Dissipation	2 W
Product Category	MOSFETs
Product Type	MOSFETs
Qg - Gate Charge	7 nC, 40 nC
Rds On - Drain-Source Resistance	65 mOhms, 70 mOhms
Rise Time	18 ns
Subcategory	Transistors
Technology	Si
Transistor Polarity	N-Channel, P-Channel
Transistor Type	1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time	40 ns, 100 ns
Typical Turn-On Delay Time	12 ns, 17 ns
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1 V
Вес, г	1