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SI1016CX-T1-GE3

Semiconductors\Discrete SemiconductorsIntegrated MOSFET Solutions Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET ® technologies and low thermal resistance.

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Dual
Factory Pack Quantity: Factory Pack Quantity	3000
Fall Time	8 ns, 11 ns
Forward Transconductance - Min	1 S, 2 S
Id - Continuous Drain Current	350 mA, 500 mA
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	2 Channel
Package / Case	SC-89-6
Pd - Power Dissipation	220 mW
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	1.3 nC, 1.65 nC
Rds On - Drain-Source Resistance	396 mOhms, 756 mOhms
Rise Time	10 ns, 16 ns
Series	SI1
Subcategory	MOSFETs
Technology	Si
Tradename	TrenchFET
Transistor Polarity	N-Channel, P-Channel
Transistor Type	1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time	10 ns, 26 ns
Typical Turn-On Delay Time	9 ns, 11 ns
Vds - Drain-Source Breakdown Voltage	20 V
Vgs - Gate-Source Voltage	-8 V, +8 V
Vgs th - Gate-Source Threshold Voltage	400 mV
Case	SC89, SOT563
Drain current	0.49/-0.49A
Drain-source voltage	20/-20V
Features of semiconductor devices	ESD protected gate
Gate charge	2/2.5nC
Gate-source voltage	±8V
Kind of channel	enhanced
Kind of package	reel, tape
Kind of transistor	complementary pair
Manufacturer	VISHAY
Mounting	SMD
On-state resistance	396/756mΩ
Polarisation	unipolar
Power dissipation	0.14W
Pulsed drain current	2A
Technology	TrenchFET®
Type of transistor	N/P-MOSFET