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SI1016X-T1-GE3, MOSFET N/P-Ch MOSFET 700/1200 mohms@4.5V
Semiconductors\Discrete Semiconductors
| Brand | Vishay Semiconductors |
| Channel Mode | Enhancement |
| Configuration | Dual |
| Factory Pack Quantity | 3000 |
| Forward Transconductance - Min | 0.4 S, 1 S |
| Id - Continuous Drain Current | 400 mA, 600 mA |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package/Case | SOT-563-6 |
| Part # Aliases | SI1016X-GE3 |
| Pd - Power Dissipation | 280 mW |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 750 pC, 1.5 nC |
| Rds On - Drain-Source Resistance | 750 mOhms, 1.2 Ohms |
| Subcategory | MOSFETs |
| Technology | Si |
| Transistor Polarity | N-Channel, P-Channel |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Typical Turn-Off Delay Time | 25 ns, 35 ns |
| Typical Turn-On Delay Time | 5 ns, 5 ns |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Vgs - Gate-Source Voltage | -6 V, +6 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Continuous Drain Current (Id) | 485mA;370mA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 700mΩ@600mA, 4.5V |
| Drain Source Voltage (Vdss) | 20V |
| Gate Threshold Voltage (Vgs(th)@Id) | 1V@250uA |
| Power Dissipation (Pd) | 250mW |
| Total Gate Charge (Qg@Vgs) | 750pC@4.5V |
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