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Цена по запросу
SI1021R-T1-GE3, MOSFET -60V Vds 20V Vgs SC75A
Semiconductors\Discrete SemiconductorsTrans MOSFET P-CH 60V 0.19A 3-Pin SC-75A T/R
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Maximum Continuous Drain Current (A) | 0.19 |
| Maximum Drain Source Resistance (MOhm) | 4000@10V |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Maximum IDSS (uA) | 0.025 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 250 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | TrenchFET |
| Product Category | Power MOSFET |
| Standard Package Name | SC |
| Supplier Package | SC-75A |
| Typical Gate Charge @ Vgs (nC) | 1.7@15V |
| Typical Input Capacitance @ Vds (pF) | 23@25V |
| Continuous Drain Current (Id) | 190mA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 4Ω@10V, 500mA |
| Drain Source Voltage (Vdss) | 60V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Input Capacitance (Ciss@Vds) | 23pF@25V |
| Power Dissipation (Pd) | 250mW |
| Total Gate Charge (Qg@Vgs) | 1.7nC@15V |
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