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SI1022R-T1-GE3, 60V Vds 20V Vgs SC75A

Semiconductors\Discrete Semiconductors Описание Транзистор: N-MOSFET, полевой, 60В, 0,24А, 0,13Вт, SC75A Характеристики Категория Транзистор Тип полевой Вид MOSFET

Категория	Транзистор
Тип	полевой
Вид	MOSFET
Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	3000
Forward Transconductance - Min	100 mS
Id - Continuous Drain Current	330 mA
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package/Case	SOT-416-3
Part # Aliases	SI1022R-GE3
Pd - Power Dissipation	250 mW
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	600 pC
Rds On - Drain-Source Resistance	2.25 Ohms
Series	SI1
Subcategory	MOSFETs
Technology	Si
Tradename	TrenchFET
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	35 ns
Typical Turn-On Delay Time	25 ns
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1 V
Current - Continuous Drain (Id) @ 25°C	330mA(Ta)
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	30 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C(TJ)
Package / Case	SC-75, SOT-416
Power Dissipation (Max)	250mW(Ta)
Rds On (Max) @ Id, Vgs	1.25Ohm @ 500mA, 10V
Supplier Device Package	SC-75A
Technology	MOSFET(Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA