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SI1025X-T1-GE3
Semiconductors\Discrete Semiconductors
| Brand | Vishay Semiconductors |
| Channel Mode | Enhancement |
| Configuration | Dual |
| Factory Pack Quantity | 3000 |
| Id - Continuous Drain Current | 200 mA |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package/Case | SC-89-6 |
| Part # Aliases | SI1025X-GE3 |
| Pd - Power Dissipation | 280 mW |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 1.7 nC |
| Rds On - Drain-Source Resistance | 8 Ohms |
| Subcategory | MOSFETs |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Continuous Drain Current (Id) | 190mA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 4Ω@500mA, 10V |
| Drain Source Voltage (Vdss) | 60V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Input Capacitance (Ciss@Vds) | 23pF@25V |
| Power Dissipation (Pd) | 250mW |
| Total Gate Charge (Qg@Vgs) | 1.7nC@15V |
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