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SI1029X-T1-GE3, MOSFET 60V Vds 20V Vgs SC89-6 N&P PAIR
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SI1029X-T1-GE3, MOSFET 60V Vds 20V Vgs SC89-6 N&P PAIR

Semiconductors\Discrete SemiconductorsIntegrated MOSFET Solutions Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET ® technologies and low thermal resistance.
Brand Vishay Semiconductors
Channel Mode Enhancement
Configuration Dual
Factory Pack Quantity: Factory Pack Quantity 3000
Forward Transconductance - Min 200 mS, 100 mS
Id - Continuous Drain Current 500 mA
Manufacturer Vishay
Maximum Operating Temperature +150 C
Minimum Operating Temperature -55 C
Mounting Style SMD/SMT
Number of Channels 2 Channel
Package / Case SC-89-6
Part # Aliases SI1029X-GE3
Pd - Power Dissipation 280 mW
Product Category MOSFET
Product Type MOSFET
Qg - Gate Charge 750 pC, 1.7 nC
Rds On - Drain-Source Resistance 1.4 Ohms, 4 Ohms
Series SI1
Subcategory MOSFETs
Technology Si
Tradename TrenchFET
Transistor Polarity N-Channel, P-Channel
Transistor Type 1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time 20 ns, 35 ns
Typical Turn-On Delay Time 15 ns, 20 ns
Vds - Drain-Source Breakdown Voltage 60 V
Vgs - Gate-Source Voltage -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage 1 V
Channel Type N, P
Maximum Continuous Drain Current 190 mA, 300 mA
Maximum Drain Source Resistance 3 Ω, 8 Ω
Maximum Drain Source Voltage 60 V
Maximum Gate Source Voltage -20 V, +20 V
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 250 mW
Minimum Gate Threshold Voltage 1V
Minimum Operating Temperature -55 °C
Mounting Type Surface Mount
Number of Elements per Chip 2
Package Type SC-89-6
Pin Count 6
Transistor Configuration Isolated
Transistor Material Si
Typical Gate Charge @ Vgs 1700 nC @ 15 V, 750 nC @ 4.5 V
Width 1.7mm

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