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SI1036X-T1-GE3, MOSFET 30V Vds 8V Vgs SC89-6

Semiconductors\Discrete SemiconductorsIntegrated MOSFET Solutions Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET ® technologies and low thermal resistance.

Brand	Vishay/Siliconix
Channel Mode	Enhancement
Configuration	Dual
Factory Pack Quantity: Factory Pack Quantity	3000
Fall Time	11 ns
Forward Transconductance - Min	7.5 S
Id - Continuous Drain Current	610 mA
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	2 Channel
Package/Case	SC-89-6
Packaging	Reel, Cut Tape
Pd - Power Dissipation	220 mW
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	2 nC
Rds On - Drain-Source Resistance	540 mOhms
Rise Time	13 ns
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	2 N-Channel
Typical Turn-Off Delay Time	20 ns
Typical Turn-On Delay Time	6 ns
Vds - Drain-Source Breakdown Voltage	30 V
Vgs - Gate-Source Voltage	-8 V, +8 V
Vgs th - Gate-Source Threshold Voltage	400 mV
Case	SC89, SOT563
Drain current	610mA
Drain-source voltage	30V
Gate charge	2nC
Gate-source voltage	±8V
Kind of channel	enhanced
Kind of package	reel, tape
Manufacturer	VISHAY
Mounting	SMD
On-state resistance	1.1Ω
Polarisation	unipolar
Power dissipation	0.22W
Pulsed drain current	2A
Technology	TrenchFET®
Type of transistor	N-MOSFET x2
Continuous Drain Current (Id)	610mA
Drain Source On Resistance (RDS(on)@Vgs,Id)	540mΩ@500mA, 4.5V
Drain Source Voltage (Vdss)	30V
Gate Threshold Voltage (Vgs(th)@Id)	1V@250uA
Input Capacitance (Ciss@Vds)	36pF@15V
Power Dissipation (Pd)	220mW
Total Gate Charge (Qg@Vgs)	1.2nC@4.5V