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SI1302DL-T1-GE3, Электроэлемент
| Brand | Vishay Semiconductors |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 3000 |
| Fall Time | 7 ns |
| Id - Continuous Drain Current | 640 mA |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-323-3 |
| Part # Aliases | SI1302DL-T1-BE3 |
| Pd - Power Dissipation | 310 mW |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 1.4 nC |
| Rds On - Drain-Source Resistance | 480 mOhms |
| Rise Time | 8 ns |
| Series | SI1 |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | TrenchFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 8 ns |
| Typical Turn-On Delay Time | 5 ns |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Вес, г | 0.0062 |
