Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
![SI1308EDL-T1-GE3, Транзистор 1.4A 30V N Channel 1.5V 250uA 0.132 1.4A,10V 0.4W [SOT-323]](/images/placeholder.jpg)
Цена по запросу
SI1308EDL-T1-GE3, Транзистор 1.4A 30V N Channel 1.5V 250uA 0.132 1.4A,10V 0.4W [SOT-323]
Описание Транзистор: N-MOSFET; полевой; 30В; 1,4А; Idm: 6А; 0,3Вт; SC70
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 1.5 A |
| Maximum Drain Source Resistance | 185 mΩ |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 400 mW |
| Minimum Gate Threshold Voltage | 0.6V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-323 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 1.4 nC @ 4.5 V |
| Width | 1.35mm |
| Вес, г | 0.034 |
