Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
![SI2301BDS-T1-GE3, Транзистор P-MOSFET 20В 2.2А 0.7Вт [SOT-23-3]](/images/placeholder.jpg)
Цена по запросу
SI2301BDS-T1-GE3, Транзистор P-MOSFET 20В 2.2А 0.7Вт [SOT-23-3]
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| HTS | 8541.29.00.95 |
| Lead Shape | Gull-wing |
| Material | Si |
| Maximum Continuous Drain Current (A) | 2.2 |
| Maximum Drain Source Resistance (mOhm) | 100@4.5V |
| Maximum Drain Source Voltage (V) | 20 |
| Maximum Gate Source Voltage (V) | ±8 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 900 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Height | 1.02(Max) |
| Package Length | 3.04(Max) |
| Package Width | 1.4(Max) |
| Packaging | Tape and Reel |
| Part Status | LTB |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | TrenchFET |
| Product Category | Power MOSFET |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| Typical Fall Time (ns) | 20 |
| Typical Gate Charge @ Vgs (nC) | 4.5@4.5V |
| Typical Input Capacitance @ Vds (pF) | 375@6V |
| Typical Rise Time (ns) | 40 |
| Typical Turn-Off Delay Time (ns) | 30 |
| Typical Turn-On Delay Time (ns) | 20 |
| Вес, г | 1 |
