Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
SI2367DS-T1-GE3
Описание Транзистор P-MOSFET, полевой, -20В, -3А, 1,1Вт, SOT23
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 2.2 A |
| Maximum Drain Source Resistance | 130 mΩ |
| Maximum Drain Source Voltage | 20 V |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.7 W |
| Minimum Gate Threshold Voltage | 0.4V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 15 nC @ 8 V |
| Width | 1.4mm |
| Вес, г | 0.008 |
