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SI3407-TP, Транзистор [SOT-23]

Split Gate Technology MOSFETs MCC Split Gate Technology MOSFETs support extremely low R DS(ON) that allows higher current density in smaller packages. These MOSFETs support increased BV dss, higher N-doping, and decreased Q gd that reduces charge coupling. These SGT MOSFETs feature improved Figure of Merit (FOM) that reduces switching and conduction losses. Typical applications include space saving and high efficiency requirement applications.

Brand	Micro Commercial Components(MCC)
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	3000
Fall Time	13.5 ns
Forward Transconductance - Min	5.5 S
Id - Continuous Drain Current	4.1 A
Manufacturer	Micro Commercial Components(MCC)
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	SOT-23-3
Pd - Power Dissipation	350 mW
Product Category	MOSFET
Product Type	MOSFET
Rds On - Drain-Source Resistance	50 mOhms
Rise Time	5 ns
Series	P-Channel Polarity
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	P-Channel
Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	28.2 ns
Typical Turn-On Delay Time	8.6 ns
Vds - Drain-Source Breakdown Voltage	30 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	3 V
Вес, г	0.04