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SI3430DV-T1-BE3, MOSFET N-CHANNEL 100V (D-S)
Semiconductors\Discrete Semiconductors
| Brand | Vishay/Siliconix |
| Channel Mode | Enhancement |
| Factory Pack Quantity | 3000 |
| Fall Time | 9 ns |
| Id - Continuous Drain Current | 2.4 A |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package/Case | TSOP-6 |
| Part # Aliases | SI3430DV-T1-E3 SI3430DV-T1-GE3 |
| Pd - Power Dissipation | 2 W |
| Product Category | MOSFETs |
| Product Type | MOSFETs |
| Qg - Gate Charge | 8.2 nC |
| Rds On - Drain-Source Resistance | 170 mOhms |
| Rise Time | 11 ns |
| Subcategory | Transistors |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 16 ns |
| Typical Turn-On Delay Time | 9 ns |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
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