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SI3473CDV-T1-E3, MOSFET -12V Vds 8V Vgs TSOP-6

Semiconductors\Discrete SemiconductorsSi3 TrenchFET® Power MOSFETs Vishay / Siliconix Si3 TrenchFET® Power MOSFETs are available in N-channel, P-channel, and N- and P-channel versions. These Si3 MOSFETs are also offered in different V GS and V DS ranges. Vishay / Siliconix Si3 TrenchFET Power MOSFETs operate in an enhancement mode and offer ultra-low R DS(ON) for high efficiency. The series incorporates Si technology and operates at a temperature range of -55°C to 150°C. Typical applications include load switches and DC to DC converters.

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	3000
Id - Continuous Drain Current	8 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	TSOP-6
Part # Aliases	SI3473CDV-T1-BE3 SI3473CDV-E3
Pd - Power Dissipation	4.2 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	65 nC
Rds On - Drain-Source Resistance	22 mOhms
Series	SI3
Subcategory	MOSFETs
Technology	Si
Tradename	TrenchFET
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	12 V
Vgs - Gate-Source Voltage	-8 V, +8 V
Vgs th - Gate-Source Threshold Voltage	1 V