Как мы работаем

По сертификату
"военный регистр"

Только с Юр. Лицами,
мелкий и крупный опт

Цена по запросу

SI3483CDV-T1-GE3

Semiconductors\Discrete Semiconductors Описание Транзистор P-MOSFET, полевой, -30В, -7А, 2,7Вт, TSOP6 Характеристики Категория Транзистор Тип полевой Вид MOSFET

Категория	Транзистор
Тип	полевой
Вид	MOSFET
Automotive	No
Channel Mode	Enhancement
Channel Type	P
Configuration	Single Quad Drain
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	8
Maximum Diode Forward Voltage (V)	1.2
Maximum Drain Source Resistance (mOhm)	34@10V
Maximum Drain Source Voltage (V)	30
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	3
Maximum IDSS (uA)	1
Maximum Operating Temperature (°C)	150
Maximum Positive Gate Source Voltage (V)	20
Maximum Power Dissipation (mW)	2000
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Operating Junction Temperature (°C)	-55 to 150
Packaging	Tape and Reel
Part Status	NRND
PCB changed	6
Pin Count	6
PPAP	No
Process Technology	TrenchFET
Product Category	Power MOSFET
Standard Package Name	SOP
Supplier Package	TSOP
Typical Fall Time (ns)	10\|15
Typical Gate Charge @ 10V (nC)	22
Typical Gate Charge @ Vgs (nC)	22@10V\|11.5@4.5V
Typical Input Capacitance @ Vds (pF)	1000@15V
Typical Rise Time (ns)	135\|15
Typical Turn-Off Delay Time (ns)	25\|30
Typical Turn-On Delay Time (ns)	45\|10