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SI3499DV-T1-BE3, MOSFET P-CHANNEL 1.5-V (G-S)

Semiconductors\Discrete SemiconductorsSi3 TrenchFET® Power MOSFETs Vishay / Siliconix Si3 TrenchFET® Power MOSFETs are available in N-channel, P-channel, and N- and P-channel versions. These Si3 MOSFETs are also offered in different VGS and VDS ranges. Vishay / Siliconix Si3 TrenchFET Power MOSFETs operate in an enhancement mode and offer ultra-low RDS(ON) for high efficiency. The series incorporates Si technology and operates at a temperature range of -55°C to 150°C. Typical applications include load switches and DC to DC converters.

Brand	Vishay/Siliconix
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	3000
Fall Time	110 ns
Id - Continuous Drain Current	7 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package/Case	TSOP-6
Part # Aliases	SI3499DV-T1-GE3
Pd - Power Dissipation	1.1 W
Product Category	MOSFETs
Product Type	MOSFETs
Qg - Gate Charge	28 nC
Rds On - Drain-Source Resistance	23 mOhms
Rise Time	65 ns
Subcategory	Transistors
Technology	Si
Transistor Polarity	P-Channel
Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	210 ns
Typical Turn-On Delay Time	27 ns
Vds - Drain-Source Breakdown Voltage	8 V
Vgs - Gate-Source Voltage	-5 V, +5 V
Vgs th - Gate-Source Threshold Voltage	750 mV