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SI4134DY-T1-GE3

Semiconductors\Discrete Semiconductors Описание Транзистор силовой полевой Характеристики Категория Транзистор Тип полевой Вид MOSFET

Категория	Транзистор
Тип	полевой
Вид	MOSFET
Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	2500
Id - Continuous Drain Current	14 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	SOIC-8
Part # Aliases	SI4134DY-GE3
Pd - Power Dissipation	5 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	23 nC
Rds On - Drain-Source Resistance	14 mOhms
Series	SI4
Subcategory	MOSFETs
Technology	Si
Tradename	TrenchFET
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	30 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1.2 V
Channel Type	N
Maximum Continuous Drain Current	9.9 A
Maximum Drain Source Resistance	14 mΩ
Maximum Drain Source Voltage	30 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	2.5 W
Minimum Gate Threshold Voltage	1.2V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOIC
Pin Count	8
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	15.4 nC @ 10 V, 7.3 nC @ 4.5 V
Width	4mm