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Цена по запросу
SI4156DY-T1-GE3, MOSFET 30V Vds 20V Vgs SO-8
Semiconductors\Discrete Semiconductors Описание Силовой МОП-транзистор, N Канал, 30 В, 24 А, 0.0048 Ом, SOIC, Surface Mount
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| HTS | 8541.29.00.95 |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 24 |
| Maximum Drain Source Resistance (MOhm) | 6@10V |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2.2 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 2500 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Height | 1.55(Max) |
| Package Length | 5(Max) |
| Package Width | 4(Max) |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | No |
| Process Technology | TrenchFET |
| Product Category | Power MOSFET |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| Typical Fall Time (ns) | 15 |
| Typical Gate Charge @ 10V (nC) | 28 |
| Typical Gate Charge @ Vgs (nC) | 28@10V|12@4.5V |
| Typical Gate to Drain Charge (nC) | 4.6 |
| Typical Gate to Source Charge (nC) | 5.4 |
| Typical Input Capacitance @ Vds (pF) | 1700@15V |
| Typical Output Capacitance (pF) | 350 |
| Typical Reverse Recovery Charge (nC) | 17 |
| Typical Rise Time (ns) | 20 |
| Typical Turn-Off Delay Time (ns) | 25 |
| Typical Turn-On Delay Time (ns) | 25 |
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