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SI4214DDY-T1-GE3, 30V Vds 20V Vgs SO-8

Semiconductors\Discrete SemiconductorsSi4 TrenchFET® Power MOSFETs Vishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different VGS and VDS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% Rg and UIS tested.

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Dual
Factory Pack Quantity	2500
Fall Time	7 ns
Forward Transconductance - Min	27 S
Id - Continuous Drain Current	8.5 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	2 Channel
Package/Case	SOIC-8
Part # Aliases	SI4920DY-T1-E3-S
Pd - Power Dissipation	3.1 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	14.5 nC
Rds On - Drain-Source Resistance	19.5 mOhms
Rise Time	10 ns
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	2 N-Channel
Typical Turn-Off Delay Time	15 ns
Typical Turn-On Delay Time	7 ns
Vds - Drain-Source Breakdown Voltage	30 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1.2 V
Continuous Drain Current (Id)	8.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)	19.5mΩ@8A, 10V
Drain Source Voltage (Vdss)	30V
Gate Threshold Voltage (Vgs(th)@Id)	2.5V@250uA
Input Capacitance (Ciss@Vds)	660pF@15V
Power Dissipation (Pd)	3.1W
Total Gate Charge (Qg@Vgs)	22nC@10V