Как мы работаем

По сертификату
"военный регистр"

Только с Юр. Лицами,
мелкий и крупный опт

Цена по запросу

SI4401DDY-T1-GE3, -40V Vds 20V Vgs SO-8

Semiconductors\Discrete SemiconductorsSi4 TrenchFET® Power MOSFETs Vishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different V GS and V DS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% R g and UIS tested.

Channel Type	P Channel
Drain Source On State Resistance	0.018Ом
Power Dissipation	6.3Вт
Количество Выводов	8вывод(-ов)
Максимальная Рабочая Температура	150°C
Монтаж транзистора	Surface Mount
Напряжение Измерения Rds(on)	4.5В
Напряжение Истока-стока Vds	40В
Непрерывный Ток Стока	16.1А
Полярность Транзистора	P Канал
Пороговое Напряжение Vgs	1.2В
Рассеиваемая Мощность	6.3Вт
Сопротивление во Включенном Состоянии Rds(on)	0.018Ом
Стиль Корпуса Транзистора	SOIC
Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	2500
Fall Time	9 ns
Forward Transconductance - Min	37 S
Id - Continuous Drain Current	16.1 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	SOIC-8
Part # Aliases	SI4401DDY-GE3
Pd - Power Dissipation	6.3 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	64 nC
Rds On - Drain-Source Resistance	15 mOhms
Rise Time	11 ns
Series	SI4
Subcategory	MOSFETs
Technology	Si
Tradename	TrenchFET
Transistor Polarity	P-Channel
Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	45 ns
Typical Turn-On Delay Time	13 ns
Vds - Drain-Source Breakdown Voltage	40 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1.2 V