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SI4425DDY-T1-GE3

Semiconductors\Discrete Semiconductors Описание Транзистор: P-MOSFET, полевой, -30В, -15,7А, 3,6Вт, SO8 Характеристики Категория Транзистор Тип полевой Вид MOSFET

Категория	Транзистор
Тип	полевой
Вид	MOSFET
Channel Mode	Enhancement
Channel Type	P
Maximum Continuous Drain Current	19.7 A
Maximum Drain Source Resistance	0.0165 O
Maximum Drain Source Voltage	30 V
Maximum Gate Threshold Voltage	2.5V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SO-8
Pin Count	8
Series	TrenchFET
Automotive	No
Configuration	Single Quad Drain Triple Source
ECCN (US)	EAR99
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	19.7
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	13
Maximum Diode Forward Voltage (V)	1.2
Maximum Drain Source Resistance (mOhm)	9.8@10V
Maximum Drain Source Voltage (V)	30
Maximum Gate Resistance (Ohm)	4.2
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	2.5
Maximum IDSS (uA)	1
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	85
Maximum Operating Temperature (°C)	150
Maximum Positive Gate Source Voltage (V)	20
Maximum Power Dissipation (mW)	2500
Maximum Power Dissipation on PCB @ TC=25°C (W)	2.5
Maximum Pulsed Drain Current @ TC=25°C (A)	50
Minimum Gate Resistance (Ohm)	0.4
Minimum Gate Threshold Voltage (V)	1.2
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Operating Junction Temperature (°C)	-55 to 150
Packaging	Tape and Reel
Part Status	Active
PCB changed	8
PPAP	No
Process Technology	TrenchFET
Product Category	Power MOSFET
Standard Package Name	SO
Supplier Package	SOIC N
Typical Diode Forward Voltage (V)	0.8
Typical Drain Source Resistance @ 25°C (mOhm)	13.7@4.5V\|8.1@10V
Typical Fall Time (ns)	15\|9
Typical Gate Charge @ 10V (nC)	53
Typical Gate Charge @ Vgs (nC)	53@10V\|27@4.5V
Typical Gate Plateau Voltage (V)	3.2
Typical Gate to Drain Charge (nC)	13
Typical Gate to Source Charge (nC)	8
Typical Input Capacitance @ Vds (pF)	2610@15V
Typical Output Capacitance (pF)	460
Typical Reverse Recovery Charge (nC)	10
Typical Reverse Recovery Time (ns)	20
Typical Reverse Transfer Capacitance @ Vds (pF)	395@15V
Typical Rise Time (ns)	41\|9
Typical Turn-Off Delay Time (ns)	36\|42
Typical Turn-On Delay Time (ns)	52\|12