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Цена по запросу
SI4436DY-T1-E3, MOSFET 60V Vds 20V Vgs SO-8
Semiconductors\Discrete SemiconductorsTrans MOSFET N-CH 60V 6.1A 8-Pin SOIC N T/R
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 6.1 |
| Maximum Drain Source Resistance (mOhm) | 36@10V |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 2500 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | No |
| Process Technology | TrenchFET |
| Product Category | Power MOSFET |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| Typical Fall Time (ns) | 60|10 |
| Typical Gate Charge @ 10V (nC) | 21 |
| Typical Gate Charge @ Vgs (nC) | 21@10V|10.5@4.5V |
| Typical Gate to Drain Charge (nC) | 4.2 |
| Typical Gate to Source Charge (nC) | 3.5 |
| Typical Input Capacitance @ Vds (pF) | 1100@30V |
| Typical Output Capacitance (pF) | 90 |
| Typical Reverse Recovery Charge (nC) | 25 |
| Typical Rise Time (ns) | 150|15 |
| Typical Turn-Off Delay Time (ns) | 20|25 |
| Typical Turn-On Delay Time (ns) | 10|20 |
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