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SI4447ADY-T1-GE3
Semiconductors\Discrete SemiconductorsSi4 TrenchFET® Power MOSFETs
Vishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different V GS and V DS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% R g and UIS tested.
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 7.2 A |
| Maximum Drain Source Resistance | 0.062 O |
| Maximum Drain Source Voltage | 40 V |
| Maximum Gate Threshold Voltage | 2.5V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SO-8 |
| Pin Count | 8 |
| Series | TrenchFET |
| Brand | Vishay Semiconductors |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 2500 |
| Fall Time | 9 ns |
| Forward Transconductance - Min | 14 S |
| Id - Continuous Drain Current | 7.2 A |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOIC-8 |
| Pd - Power Dissipation | 4.2 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 25 nC |
| Rds On - Drain-Source Resistance | 45 mOhms |
| Rise Time | 12 ns |
| Series | SI4 |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | TrenchFET |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 30 ns |
| Typical Turn-On Delay Time | 7 ns |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Case | SO8 |
| Drain current | -7.2A |
| Drain-source voltage | -40V |
| Gate charge | 38nC |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Manufacturer | VISHAY |
| Mounting | SMD |
| On-state resistance | 62mΩ |
| Polarisation | unipolar |
| Power dissipation | 4.2W |
| Pulsed drain current | -20A |
| Technology | TrenchFET® |
| Type of transistor | P-MOSFET |
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