Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
SI4447DY-T1-GE3
| Brand | Vishay Semiconductors |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 2500 |
| Id - Continuous Drain Current | 4.5 A |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOIC-8 |
| Part # Aliases | SI4447DY-GE3 |
| Pd - Power Dissipation | 2 W |
| Product Category | MOSFETs |
| Product Type | MOSFETs |
| Qg - Gate Charge | 14 nC |
| Rds On - Drain-Source Resistance | 54 mOhms |
| Subcategory | Transistors |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Vgs - Gate-Source Voltage | -16 V, +16 V |
| Vgs th - Gate-Source Threshold Voltage | 2.2 V |
| Вес, г | 0.187 |
