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SI4559ADY-T1-E3, MOSFET -60V Vds 20V Vgs SO-8 N&P PAIR

Semiconductors\Discrete SemiconductorsSi4 TrenchFET® Power MOSFETs Vishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different V GS and V DS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% R g and UIS tested.

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Dual
Factory Pack Quantity: Factory Pack Quantity	2500
Fall Time	10 ns, 30 ns
Forward Transconductance - Min	15 S, 8.5 S
Id - Continuous Drain Current	5.3 A, 3.9 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	2 Channel
Package / Case	SOIC-8
Part # Aliases	SI4559ADY-E3
Pd - Power Dissipation	3.1 W, 3.4 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	20 nC, 22 nC
Rds On - Drain-Source Resistance	58 mOhms, 120 mOhms
Rise Time	65 ns, 70 ns
Series	SI4
Subcategory	MOSFETs
Technology	Si
Tradename	TrenchFET
Transistor Polarity	N-Channel, P-Channel
Transistor Type	1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time	15 ns, 40 ns
Typical Turn-On Delay Time	15 ns, 30 ns
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1 V
Automotive	No
Channel Type	N\|P
Configuration	Dual Dual Drain
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	4.3@N Channel\|3@P Channel
Maximum Drain Source Resistance (mOhm)	58@10V@N Channel\|120@10V@P Channel
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	2000
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	2
Packaging	Tape and Reel
Part Status	Active
PCB changed	8
Pin Count	8
PPAP	No
Process Technology	TrenchFET
Product Category	Power MOSFET
Standard Package Name	SO
Supplier Package	SOIC N
Typical Fall Time (ns)	10@N Channel\|30@P Channel
Typical Gate Charge @ 10V (nC)	13@N Channel\|14.5@P Channel
Typical Gate Charge @ Vgs (nC)	13@10V\|6@4.5V@N Channel\|14.5@10V\|8@4.5V@P Channel
Typical Input Capacitance @ Vds (pF)	650@15V@P Channel\|665@15V@N Channel
Typical Rise Time (ns)	65\|15@N Channel\|70\|13@P Channel
Typical Turn-Off Delay Time (ns)	15\|20@N Channel\|40\|35@P Channel
Typical Turn-On Delay Time (ns)	15\|10@N Channel\|30\|10@P Channel