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SI4559ADY-T1-GE3, MOSFET -60V Vds 20V Vgs SO-8 N&P PAIR

Semiconductors\Discrete SemiconductorsSi4 TrenchFET® Power MOSFETs Vishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different V GS and V DS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% R g and UIS tested.

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Dual
Factory Pack Quantity: Factory Pack Quantity	2500
Id - Continuous Drain Current	5.3 A, 3.9 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	2 Channel
Package / Case	SOIC-8
Part # Aliases	SI4559ADY-GE3
Pd - Power Dissipation	3.1 W, 3.4 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	20 nC, 22 nC
Rds On - Drain-Source Resistance	58 mOhms, 120 mOhms
Series	SI4
Subcategory	MOSFETs
Technology	Si
Tradename	TrenchFET
Transistor Polarity	N-Channel, P-Channel
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1 V, 3 V
Channel Type	N, P
Maximum Continuous Drain Current	3.9 A, 5.3 A
Maximum Drain Source Resistance	72 mΩ, 150 mΩ
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	3.1 W, 3.4 W
Minimum Gate Threshold Voltage	1V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	2
Package Type	SOIC
Pin Count	8
Transistor Configuration	Isolated
Transistor Material	Si
Typical Gate Charge @ Vgs	13 nC @ 30 V, 14.5 nC @ 30 V
Width	4mm