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SI4599DY-T1-GE3

Semiconductors\Discrete SemiconductorsSi4 TrenchFET® Power MOSFETs Vishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different V GS and V DS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% R g and UIS tested.

Channel Mode	Enhancement
Channel Type	N, P
Maximum Continuous Drain Current	4.7 A, 6.8 A
Maximum Drain Source Resistance	42.5 mΩ, 62 mΩ
Maximum Drain Source Voltage	40 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	3 W, 3.1 W
Minimum Gate Threshold Voltage	1.2V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	2
Package Type	SOIC
Pin Count	8
Transistor Configuration	Isolated
Transistor Material	Si
Typical Gate Charge @ Vgs	11.7 nC @ 10 V, 25 nC @ 10 V
Width	4mm
Brand	Vishay Semiconductors
Configuration	Dual
Factory Pack Quantity: Factory Pack Quantity	2500
Fall Time	9 ns, 9 ns
Forward Transconductance - Min	14 S, 22 S
Id - Continuous Drain Current	5.8 A, 6.8 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	2 Channel
Package / Case	SOIC-8
Part # Aliases	SI4599DY-GE3
Pd - Power Dissipation	3 W, 3.1 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	11.7 nC, 25 nC
Rds On - Drain-Source Resistance	35.5 mOhms, 45 mOhms
Rise Time	10 ns, 12 ns
Series	SI4
Subcategory	MOSFETs
Technology	Si
Tradename	TrenchFET
Transistor Polarity	N-Channel, P-Channel
Transistor Type	1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time	15 ns, 30 ns
Typical Turn-On Delay Time	7 ns, 7 ns
Vds - Drain-Source Breakdown Voltage	40 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1.2 V, 1.4 V
Case	SO8
Drain current	6.8/-5.8A
Drain-source voltage	40/-40V
Gate charge	38/20nC
Gate-source voltage	±20V
Kind of channel	enhanced
Kind of package	reel, tape
Manufacturer	VISHAY
Mounting	SMD
On-state resistance	62/42.5mΩ
Polarisation	unipolar
Power dissipation	3.1/3W
Technology	TrenchFET®
Type of transistor	N/P-MOSFET
Continuous Drain Current (Id)	6.8A;5.8A
Drain Source On Resistance (RDS(on)@Vgs,Id)	35.5mΩ@5A, 10V
Drain Source Voltage (Vdss)	40V
Gate Threshold Voltage (Vgs(th)@Id)	3V@250uA
Input Capacitance (Ciss@Vds)	640pF@20V
Power Dissipation (Pd)	3W;3.1W
Total Gate Charge (Qg@Vgs)	20nC@10V