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SI4850EY-T1-GE3, MOSFET 60V Vds 20V Vgs SO-8

Semiconductors\Discrete SemiconductorsSi4 TrenchFET® Power MOSFETs Vishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different V GS and V DS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% R g and UIS tested.

Brand	Vishay/Siliconix
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	2500
Fall Time	12 ns
Forward Transconductance - Min	25 S
Id - Continuous Drain Current	8.5 A
Manufacturer	Vishay
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number Of Channels	1 Channel
Package / Case	SO-8
Packaging	Cut Tape or Reel
Part # Aliases	SI4850EY-GE3
Pd - Power Dissipation	3.3 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	18 nC
Rds On - Drain-Source Resistance	22 mOhms
Rise Time	10 ns
Series	SI4
Subcategory	MOSFETs
Technology	Si
Tradename	TrenchFET
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	25 ns
Typical Turn-On Delay Time	10 ns
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	10 V
Vgs Th - Gate-Source Threshold Voltage	1 V
Brand	Vishay Semiconductors
Factory Pack Quantity: Factory Pack Quantity	2500
Package / Case	SOIC-8
Vgs - Gate-Source Voltage	-20 V, +20 V
Channel Type	N
Maximum Continuous Drain Current	8.5 A
Maximum Drain Source Resistance	47 mΩ
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Power Dissipation	3.3 W
Minimum Gate Threshold Voltage	1V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOIC
Pin Count	8
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	18 nC @ 10 V
Width	4mm