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SI4909DY-T1-GE3

Semiconductors\Discrete SemiconductorsIntegrated MOSFET Solutions Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET ® technologies and low thermal resistance.

Channel Mode	Enhancement
Channel Type	P
Maximum Continuous Drain Current	6.5 A
Maximum Drain Source Resistance	34 mΩ
Maximum Drain Source Voltage	40 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	3.2 W
Minimum Gate Threshold Voltage	1.2V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	2
Package Type	SOIC
Pin Count	8
Transistor Configuration	Isolated
Transistor Material	Si
Typical Gate Charge @ Vgs	41.5 nC @ 10 V
Width	4mm
Brand	Vishay Semiconductors
Configuration	Dual
Factory Pack Quantity: Factory Pack Quantity	2500
Fall Time	18 ns
Forward Transconductance - Min	22 S
Id - Continuous Drain Current	8 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	2 Channel
Package / Case	SOIC-8
Pd - Power Dissipation	3.2 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	63 nC
Rds On - Drain-Source Resistance	27 mOhms
Rise Time	40 ns
Series	SI4
Subcategory	MOSFETs
Technology	Si
Tradename	TrenchFET
Transistor Polarity	P-Channel
Transistor Type	2 P-Channel
Typical Turn-Off Delay Time	40 ns
Typical Turn-On Delay Time	42 ns
Vds - Drain-Source Breakdown Voltage	40 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1.2 V
Continuous Drain Current (Id)	8A
Drain Source On Resistance (RDS(on)@Vgs,Id)	27mΩ@10V, 8A
Drain Source Voltage (Vdss)	40V
Gate Threshold Voltage (Vgs(th)@Id)	2.5V@250uA
Input Capacitance (Ciss@Vds)	2nF@20V
Power Dissipation (Pd)	3.2W
Total Gate Charge (Qg@Vgs)	63nC@10V