Как мы работаем

По сертификату
"военный регистр"

Только с Юр. Лицами,
мелкий и крупный опт

Цена по запросу

Заказать в 1 клик

SI4925BDY-T1-E3

Semiconductors\Discrete SemiconductorsTrans MOSFET P-CH 30V 5.3A 8-Pin SOIC N T/R

Automotive	No
Channel Mode	Enhancement
Channel Type	P
Configuration	Dual Dual Drain
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	5.3
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	7.1
Maximum Diode Forward Voltage (V)	1.2
Maximum Drain Source Resistance (mOhm)	25@10V
Maximum Drain Source Voltage (V)	30
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	3
Maximum IDSS (uA)	1
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	110
Maximum Operating Temperature (°C)	150
Maximum Positive Gate Source Voltage (V)	20
Maximum Power Dissipation (mW)	2000
Maximum Power Dissipation on PCB @ TC=25°C (W)	2
Maximum Pulsed Drain Current @ TC=25°C (A)	40
Minimum Gate Threshold Voltage (V)	1
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	2
Operating Junction Temperature (°C)	-55 to 150
Packaging	Tape and Reel
Part Status	NRND
PCB changed	8
Pin Count	8
PPAP	No
Process Technology	TrenchFET
Product Category	Power MOSFET
Standard Package Name	SO
Supplier Package	SOIC N
Typical Diode Forward Voltage (V)	0.8
Typical Fall Time (ns)	34
Typical Gate Charge @ 10V (nC)	33
Typical Gate Charge @ Vgs (nC)	33@10V
Typical Gate Plateau Voltage (V)	3.8
Typical Gate to Drain Charge (nC)	8.9
Typical Gate to Source Charge (nC)	5.4
Typical Output Capacitance (pF)	250
Typical Reverse Recovery Time (ns)	30
Typical Rise Time (ns)	12
Typical Turn-Off Delay Time (ns)	60
Typical Turn-On Delay Time (ns)	9