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SI4946BEY-T1-GE3
Semiconductors\Discrete SemiconductorsTrans MOSFET N-CH 60V 6.5A 8-Pin SOIC N T/R
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 6.5 A |
| Maximum Drain Source Resistance | 52 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 3.7 W |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Package Type | SOIC |
| Pin Count | 8 |
| Transistor Configuration | Isolated |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 17 nC @ 10 V |
| Width | 4mm |
| Automotive | No |
| Configuration | Dual Dual Drain |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 6.5 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 5.3 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Maximum Drain Source Resistance (mOhm) | 41@10V |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Resistance (Ohm) | 9.5 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Maximum IDSS (uA) | 1 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 110 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Power Dissipation (mW) | 2400 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.4 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 30 |
| Minimum Gate Resistance (Ohm) | 3.1 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Operating Junction Temperature (°C) | -55 to 175 |
| Packaging | Tape and Reel |
| Part Status | NRND |
| PCB changed | 8 |
| PPAP | No |
| Process Technology | TrenchFET |
| Product Category | Power MOSFET |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Fall Time (ns) | 30|10 |
| Typical Gate Charge @ 10V (nC) | 17 |
| Typical Gate Charge @ Vgs (nC) | 9.2@5V|17@10V |
| Typical Gate Plateau Voltage (V) | 3.8 |
| Typical Gate Threshold Voltage (V) | 2.4 |
| Typical Gate to Drain Charge (nC) | 3.7 |
| Typical Gate to Source Charge (nC) | 3.3 |
| Typical Input Capacitance @ Vds (pF) | 840@30V |
| Typical Output Capacitance (pF) | 71 |
| Typical Reverse Recovery Charge (nC) | 25 |
| Typical Reverse Recovery Time (ns) | 25 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 44@30V |
| Typical Rise Time (ns) | 120|12 |
| Typical Turn-Off Delay Time (ns) | 20|25 |
| Typical Turn-On Delay Time (ns) | 10|20 |
| Case | SO8 |
| Drain current | 4.4A |
| Drain-source voltage | 60V |
| Gate charge | 25nC |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Manufacturer | VISHAY |
| On-state resistance | 52mΩ |
| Polarisation | unipolar |
| Power dissipation | 3.7W |
| Type of transistor | N-MOSFET x2 |
| Continuous Drain Current (Id) | 6.5A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 41mΩ@10V, 5.3A |
| Drain Source Voltage (Vdss) | 60V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Input Capacitance (Ciss@Vds) | 840pF@30V |
| Power Dissipation (Pd) | 3.7W |
| Total Gate Charge (Qg@Vgs) | 25nC@10V |
| Диапазон рабочих температур | -55°C~150°C |
| Полярность | Dual N-Channel |
| Тип монтажа | Surface Mount |
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