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SI4948BEY-T1-GE3, MOSFET -60V Vds 20V Vgs SO-8

Semiconductors\Discrete Semiconductors Описание Транзистор: P-MOSFET; полевой; -60В; -2,4А; Idm: -25А; 0,95Вт; SO8

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Dual
Factory Pack Quantity: Factory Pack Quantity	2500
Id - Continuous Drain Current	3.1 A
Manufacturer	Vishay
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	2 Channel
Package / Case	SOIC-8
Part # Aliases	SI4948BEY-GE3
Pd - Power Dissipation	2.4 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	22 nC
Rds On - Drain-Source Resistance	120 mOhms
Series	SI4
Subcategory	MOSFETs
Technology	Si
Tradename	TrenchFET
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	3 V
Channel Type	P
Maximum Continuous Drain Current	3.1 A
Maximum Drain Source Resistance	150 mΩ
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	2.4 W
Minimum Gate Threshold Voltage	1V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	2
Package Type	SOIC
Pin Count	8
Transistor Configuration	Isolated
Transistor Material	Si
Typical Gate Charge @ Vgs	14.5 nC @ 10 V
Width	4mm