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SI5457DC-T1-GE3
Semiconductors\Discrete Semiconductors
| Brand | Vishay Semiconductors |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 3000 |
| Id - Continuous Drain Current | 6 A |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package/Case | ChipFET-8 |
| Part # Aliases | SI5457DC-GE3 |
| Pd - Power Dissipation | 5.7 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 38 nC |
| Rds On - Drain-Source Resistance | 56 mOhms |
| Subcategory | MOSFETs |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Vgs - Gate-Source Voltage | -12 V, +12 V |
| Vgs th - Gate-Source Threshold Voltage | 1.4 V |
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